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Technische Information / Technical Information
IGBT-Module IGBT-Modules
FB20R06KL4
Vorlaufig Preliminary
Elektrische Eigenschaften / Electrical properties
Hochstzulassige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier Periodische Ruckw. Spitzensperrspannung repetitive peak reverse voltage Durchlastrom Grenzeffektivwert pro Chip RMS forward current per chip Gleichrichter Ausgang Grenzeffektivstrom maximum RMS current at Rectifier output Stostrom Grenzwert surge forward current Grenzlastintegral I2t - value Tvj =25C TC =80C TC =80C tP = 10 ms, T vj = tP = 10 ms, T vj = 25C 25C VRRM IFRMSM IRMSmax IFSM
2 It
800 58 96 448 358 1000 642
V A A A A A2 s A2 s
tP = 10 ms, T vj = 150C tP = 10 ms, T vj = 150C
Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral 2 I t - value tP = 1 ms VR = 0V, t p = 10ms, T vj = 125C IF IFRM
2 It
Tvj =25C TC = 65C TC = 25 C tP = 1 ms, TC = 25C T C =65C
VCES IC,nom. IC ICRM Ptot VGES
600 20 25 40 80 +/- 20V
V A A A W V
20 40 62
A A A2 s
prepared by: Thomas Passe approved by: Ingo Graf
date of publication: 2002-02-27 revision: 5
1(11)
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FB20R06KL4
Vorlaufig Preliminary
RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate
Modul Isolation/ Module Isolation Isolations-Prufspannung insulation test voltage VISOL 2,5 kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier Durchlaspannung forward voltage Schleusenspannung threshold voltage Ersatzwiderstand slope resistance Sperrstrom reverse current Modul Leitungswiderstand, Anschlusse-Chip lead resistance, terminals-chip Tvj = 150C, Tvj = 150C Tvj = 150C Tvj = 150C, TC = 25C V R = 800 V I F = 20 A VF V(TO) rT IR RAA'+CC'
min.
-
typ.
0,85 0,63 10 5 4
max.
V V mW mA mW
Transistor Wechselrichter/ Transistor Inverter VGE = 15V, T vj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, T vj = 125C, Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data VCE = VGE, Tvj = 25C,
min.
I C = 20 A I C = 20 A I C = 0,5mA VGE(TO) Cies ICES IGES VCE sat 4,5 -
typ.
1,95 2,2 5,5 1,1 5,0 -
max.
2,55 6,5 400 V V V nF mA nA
f = 1MHz, Tvj = 25C VCE = 25 V, V GE = 0 V VGE = 0V, Tvj = 125C, VCE = 600V VCE = 0V, V GE =20V, Tvj =25C IC = INenn, V CC = 300 V 47 Ohm 47 Ohm 47 Ohm 47 Ohm 47 Ohm 47 Ohm 47 Ohm 47 Ohm 47 Ohm
VGE = 15V, Tvj = 25C, R G = VGE = 15V, Tvj = 125C, R G = IC = INenn, VGE = 15V, Tvj = 25C, R G = VGE = 15V, Tvj = 125C, R G = IC = INenn, VGE = 15V, Tvj = 25C, R G = VGE = 15V, Tvj = 125C, R G = IC = INenn, VGE = 15V, Tvj = 25C, R G = VGE = 15V, Tvj = 125C, R G = IC = INenn, VGE = 15V, Tvj = 125C, R G = L IC = INenn,
S
td,on
-
22 31 23 37 143 154 22 38 0,73
-
ns ns ns ns ns ns ns ns mWs
V CC = 300 V tr td,off tf Eon -
V CC = 300 V
V CC = 300 V
V CC = 300 V = 80 nH 47 Ohm 47 Ohm 360 V ISC 80 A Eoff 0,56 mWs
V CC = 300 V L
S
VGE = 15V, Tvj = 125C, R G = tP 10s, V GE 15V, Tvj125C, RG = VCC =
= 80 nH
2(11)
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FB20R06KL4
Vorlaufig Preliminary
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values min.
Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse-Chip lead resistance, terminals-chip Diode Wechselrichter/ Diode Inverter Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current Sperrverzogerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy LsCE TC = 25C RCC'+EE' -
typ.
13
max.
40 nH mW
min.
VGE = 0V, Tvj = 25C, VGE = 0V, Tvj = 125C, IF=INenn, I F = 20 A I F = 20 A 300 V 300 V 300 V 300 V 300 V 300 V Erec Qr IRM VF -
typ.
1,7 1,7 20 23 1 1,7 0,2 0,35
max.
2,15 V V A A As As mWs mWs
- diF/dt = 1000 A/us
VGE = -10V, Tvj = 25C, V R = VGE = -10V, Tvj = 125C, V R = IF=INenn, VGE = -10V, Tvj = 25C, V R = VGE = -10V, Tvj = 125C, V R = IF=INenn, VGE = -10V, Tvj = 25C, V R = VGE = -10V, Tvj = 125C, V R =
- diF/dt = 1000 A/us
- diF/dt = 1000 A/us
NTC-Widerstand/ NTC-Thermistor Nennwiderstand Abweichung von R100 deviation of R100 Verlustleistung power dissipation B-Wert B-value
min.
TC = 25C TC = 100C, R 100 = 493 W TC = 25C R2 = R1 exp [B(1/T2 - 1/T1)] R25 DR/R P25 B25/50 -5
typ.
5
max.
5 20 kW % mW K
3375
3(11)
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FB20R06KL4
Vorlaufig Preliminary
Thermische Eigenschaften / Thermal properties
min.
Innerer Warmewiderstand thermal resistance, junction to heatsink Gleichr. Diode/ Rectif. Diode lPaste=1W/m*K RthJH -
typ.
1,1 1,8 3,7
max.
K/W K/W K/W
Trans. Wechsr./ Trans. Inverter lgrease =1W/m*K Diode Wechsr./ Diode Inverter
Innerer Warmewiderstand thermal resistance, junction to case
Gleichr. Diode/ Rectif. Diode Trans. Wechsr./ Trans. Inverter Diode Wechsr./ Diode Inverter
RthJC
-
-
1 1,6 2,7
K/W K/W K/W
Ubergangs-Warmewiderstand thermal resistance, case to heatsink
Gleichr. Diode/ Rectif. Diode
lPaste=1W/m*K
RthCH
-
0,2 0,4 1,3
-
K/W K/W K/W
Trans. Wechsr./ Trans. Inverter lgrease =1W/m*K Diode Wechsr./ Diode Inverter
Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature
Tvj Top Tstg
-40 -40
-
150 125 125
C C C
Mechanische Eigenschaften / Mechanical properties
Innere Isolation internal insulation CTI comperative tracking index Anprekraft f. mech. Befestigung pro Feder mounting force per clamp Gewicht weight Kontakt - Kuhlkorper terminal to heatsink Kriechstrecke creeping distance Luftstrecke clearance Terminal - Terminal terminal to terminal Kriechstrecke creeping distance Luftstrecke clearance F Al2O3 225 40...80 36 13,5 N
G
g mm
12
mm
7,5
mm
7,5
mm
4(11)
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FB20R06KL4
Vorlaufig Preliminary
IC = f (VCE)
VGE = 15 V
Ausgangskennlinienfeld Wechselr. (typisch) Output characteristic Inverter (typical)
40 35 30 25 Tj = 25C Tj = 125C
IC [A]
20 15 10 5 0 0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00
VCE [V]
Ausgangskennlinienfeld Wechselr. (typisch) Output characteristic Inverter (typical)
40 35 30 VGE = 10V 25 Vge=12V Vge=15V Vge=20V 15 10 5 0 0,00 0,50 1,00 1,50 2,00 2,50 VGE = 8V VGE = 9V
IC = f (VCE)
T vj = 125C
IC [A]
20
3,00
3,50
4,00
4,50
5,00
VCE [V]
5(11)
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FB20R06KL4
Vorlaufig Preliminary
IC = f (VGE)
VCE = 20 V
Ubertragungscharakteristik Wechselr. (typisch) Transfer characteristic Inverter (typical)
40 35 30 25 Tj = 25C Tj = 125C
IC [A]
20 15 10 5 0 5,00 6,00 7,00 8,00 9,00 10,00 11,00 12,00
VGE [V]
Durchlakennlinie der Freilaufdiode Wechselr. (typisch) Forward characteristic of FWD Inverter (typical)
40 Tj = 25C 35 30 25 Tj = 125C
IF = f (VF)
IF [A]
20 15 10 5 0 0,00 0,50 1,00 1,50 2,00 2,50 3,00
VF [V]
6(11)
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FB20R06KL4
Vorlaufig Preliminary
E = f (IC), Eoff = f (IC), Erec = f (IC) on
T j = 125C, V GE = 15 V, VCC = 300 V 47 Ohm
Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical)
3 Eon 2,5 Eoff Erec 2
R Gon = RGoff =
E [mWs]
1,5
1
0,5
0 0 5 10 15 20 25 30 35 40 45
IC [A]
Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical)
3 Eon 2,5 Eoff Erec 2
E = f (RG), Eoff = f (RG), Erec = f (RG) on
T j = 125C, V GE = +-15 V , I c = Inenn , V CC = 300 V
E [mWs]
1,5
1
0,5
0 40 50 60 70 80 90 100 110 120
RG [W]
7(11)
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FB20R06KL4
Vorlaufig Preliminary
ZthJH = f (t)
Transienter Warmewiderstand Wechselr. Transient thermal impedance Inverter
10,000 Zth-IGBT Zth-FWD
ZthJH [K/W]
1,000
i 1 2 3 IGBT: ri [K/W]: 118,66e-3 592,55e-3 464,26e-3
4 624,52e-3 226,61e-3 1,27 227,3e-3
10
ti [s]: 3e-6 FWD: r i [K/W]: 245,4e-3 ti [s]:
0,100 0,001 0,01 0,1
79,74e-3 1,22 80,4e-3
10,28e-3 956,8e-3 10,35e-3
1
3e-6
t [s]
Sicherer Arbeitsbereich Wechselr. (RBSOA)
45 40 35 30 25 20 15 10 5 0 0 100 200 300 400
IC = f (VCE)
47 Ohm
Reverse bias save operating area Inverter (RBSOA)Tvj = 125C, V GE = 15V, R G =
IC,Modul IC,Chip
IC [A]
500
600
700
VCE [V]
8(11)
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FB20R06KL4
Vorlaufig Preliminary
IF = f (VF)
Durchlakennlinie der Gleichrichterdiode (typisch) Forward characteristic of Rectifier Diode (typical)
40 35 30 25 Tj = 25C Tj = 150C
IF [A]
20 15 10 5 0 0,00 0,20 0,40 0,60 0,80 1,00 1,20
VF [V]
NTC- Temperaturkennlinie (typisch) R = f (T) NTC- temperature characteristic (typical)
100000 Rtyp
10000
R[W]
1000 100 0 20 40 60 80 100 120 140
TC [C]
9(11)
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FB20R06KL4
Vorlaufig Preliminary
Schaltplan/ Circuit diagram
J
Gehauseabmessungen/ Package outlines
Bohrplan / drilling layout
10(11)
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FB20R06KL4
Gehauseabmessungen Forts. / Package outlines contd.
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Diese gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.
11(11)
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